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       Page 1 QW-A1083 Symbol Min Typ Max Unit Parameter Conditions Forward voltage Reverse current Capacitance between terminals Reverse recovery time VR = 2 5V f = 1 MHz, and 1 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 ohm IR CT Trr uA pF nS 5 10 0.5 CDBFR42/43 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 n Typ Max Unit IO IFSM VR(RMS) VR VRM IFRM Repetitive peak forward current Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Mi Parameter Conditions RMS reverse voltage 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A A mA V V V 4 0.5 200 21 30 30 TSTG Tj Storage temperature Junction temperature O C O C +125 +125 -55 PD Power Dissipation Thermal resistance junction to ambient air mW O C/W 200 500 R JA CDBFR42/43 CDBFR42 CDBFR43 CDBFR42 CDBFR43 IF = 1 0mA IF = 2 00mA IF = 5 0mA IF = 2 mA IF = 1 5mA VF V 0.4 1 0.65 0.33 0.45 REV:A 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.040(1.00) Typ. SMD Schottky Barrier Diode Io = 2 00 mA VR = 3 0 Volts RoHS Device Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F standard package m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Polarity: Indicated by cathode band. - Mounting position: Any - Weight: 0.006 gram(approx.). 1005/SOD-323F |